2003. 3. 25
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SEMICONDUCTOR
TECHNICAL DATA
MPS8050S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH CURRENT APPLICATION.
FEATURE
Complementary to MPS8550S.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=35V, I
E
=0
-
-
100
nA
Emitter Cut-off Current
I
EBO
V
EB
=6V, I
C
=0
-
-
100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=100 A, I
E
=0
40
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=2mA, I
B
=0
25
-
-
V
DC Current Gain
h
FE
(1)
V
CE
=1V, I
C
=5mA
45
135
-
h
FE
(2) (Note)
V
CE
=1V, I
C
=100mA
85
160
300
h
FE
(3)
V
CE
=1V, I
C
=800mA
40
110
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=800mA, I
B
=80mA
-
0.28
0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=800mA, I
B
=80mA
-
0.98
1.2
V
Base-Emitter Voltage
V
BE
V
CE
=1V, I
C
=10mA
-
0.66
1.0
V
Transition Frequency
f
T
V
CE
=10V, I
C
=50mA
100
190
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz, I
E
=0
-
9
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
1.5
A
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : h
FE
(2) Classification B:85 160 , C : 120 200 , D : 160 300
* P
C
: Package Mounted On 99.5% Alumina (10 8 0.6 )
h Rank
Type Name
Marking
Lot No.
BH
FE
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MPS8050S
Revision No : 1
f - I
C
COLLECTOR CURRENT I (mA)
1
3
10
100
T
TRANSITION FREQUENCY f (MHz)
10
C
COLLECTOR CURRENT I (mA)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
0.4
0.8
1.2
1.6
2.0
0.1
0.2
0.3
0.4
0.5
I =3.0mA
B
T
C
300
30
30
50
100
300
V =10V
CE
I =2.5mA
B
I =2.0mA
B
I =1.5mA
B
I =1.0mA
B
I =0.5mA
B
100
DC CURRENT GAIN h
1
COLLECTOR CURRENT I (mA)
0.1
10
30
50
0.3
10
3
30
C
100
1k
FE
300
500
h - I
FE
C
V =1V
CE
300
1K
0.1
COLLECTOR CURRENT I (mA)
C
BASE-EMITTER VOLTAGE V (V)
BE
I - V
C
BE
0
0.2
0.4
0.6
0.8
1.0
1.2
0.3
1
3
10
30
100
0.5
5
50
V =1V
CE
SATURATION VOLTAGE
BE(sat),
COLLECTOR CURRENT I (mA)
C
V V - I
BE(sat),
CE(sat)
C
V V (mV)
CE(sat)
I =10I
0.1
10
30
100
50
300
0.3
1
3
10
30
100
1k
500
300
1K
C
3k
5k
V (sat)
CE
BE
V (sat)
B
5
50
1
5
10
50
100
10
1
5
50
f=1MHz
E
I =0
COLLECTOR OUTPUT CAPACITANCE
ob
COLLECTOR-BASE VOLTAGE V (V)
CB
C - V
ob
CB
C (pF)
3
30
3
30
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